成岩

2017-今   华东师范大学 bat官方网页版 电子科学系 极化材料与器件教育部重点实验室

2011-2017  中国科学院 上海微系统与信息技术研究所 信息功能材料国家重点实验室

2017年12月至今，极化材料与器件教育部重点实验室，bat官方网页版，电子科学系。从事新型存储器的原子层次结构和机理研究，以及“器件-结构-性能”间关系研究。

https://www.ecnu.edu.cn/info/1094/56176.htm

https://www.ecnu.edu.cn/info/1094/56176.htm

https://www.ecnu.edu.cn/info/1094/61761.htm

https://clpm.ecnu.edu.cn/58/6a/c30948a415850/page.htm

https://www.thepaper.cn/newsDetail_forward_23756010

https://mp.weixin.qq.com/s/gbajV5Qv66KhJS_5xJdDNQ

https://mp.weixin.qq.com/s/wADeAJ41TffU_JdbHtgDow

本科生课程：现代信息存储技术

研究生课程：电子材料与器件

30. 上海市政府间国际科技合作项目：面向神经形态计算的相变存储器多值存储微观机理与可靠性研究，2023.09-2026.08，主持。

29. 紫江优秀青年学者（2023）。

28. 国家级青年人才计划项目（2023）。

27. 集成电路材料全国重点实验室开放课题，2023.07-2025.06，主持。

26. 上海市自然科学基金面上项目：铪基铁电薄膜的极化翻转动力学研究，2023.04-2026.03，主持。

25. 海思合作项目（第二期），2023.01-2024.01，主持。

24. 电子元器件可靠性物理及其应用技术重点实验室开放课题，2022.11-2024.11，主持。

23. 国家自然科学基金面上项目：新型氧化铪基铁电薄膜极化起源及调控机理研究，2022.01-2025.12，主持。

22. 海思合作项目（第一期），2021.10-2022.11，主持。

21. 华为合作项目，2021.10-2022.11，主持。

20. 国家自然科学基金重大研究计划：新型极低功耗铁电场效应管存算一体器件研究，2021.01-2024.12，参与。

19. 上海市存储器纳米制造技术重点实验室开放课题，2020.9-2022.8，主持。

18. 华东师范大学实验技术研制项目，2020.9-2021.8，主持。

17. 中国科学院战略性先导科技专项：铪基铁电材料的物理起源研究，2020.1-2024.12，参与。

16. 极化材料与器件教育部重点实验室主任基金，2020.1-2020.12，主持。

15. 电子科学系开放课题，2020.1-2020.12，主持。

14. 信息功能材料国家重点实验室开放课题，2019.7-2021.7，主持。

13. 国家重点基础研发计划：新型相变材料开发与机理研究，2017.7-2022.6，参与。 

12. 国家重点基础研发计划：高可靠相变存储材料与器件研究，2017.7-2021.6，参与。

11. 信息功能材料国家重点实验室自主课题，2016.1-2017.12，主持。

10. 国家自然科学基金面上：钛锑碲相变材料的相变机理与微缩特性研究，2014.01-2017.12，参与。

9. 中国科学院战略性先导科技专项：高密度相变存储器技术，2013.6-2017.12，参与。

8. 国家重点基础研发计划：半导体相变存储器，2013.4-2015.8，参与。

7. 国家自然科学基金青年：纳米复合相变存储材料Si-Sb₂Te₃的相转变机理研究，2012.1-2014.1，主持。

6.中国科学院王宽诚博士后工作基金，2012.4-2013.7，主持。

5. 中国博士后科学基金特别资助项目，2011.1-2013.7，主持。

4. 中国博士后科学基金面上项目，2011.1-2013.7，主持。 

3. 国家重点基础研发计划：相变存储器规模制造技术关键基础问题研究，2010.1-2014.8，参与。

2. 02集成电路重大专项：45nm相变存储器工程化关键技术与应用，2009.1-2011.12，参与。

1. 国家重点基础研发计划：基于纳米结构的相变机理及嵌入式PCRAM应用基础研究，2007.7-2011.8，参与。

2024年

145. 辛天骄，王怡炜，高兆猛，郑赟喆，郑勇辉，成岩，氧化铪基铁电电容的唤醒-疲劳效应与相结构演变，电子显微学报，43: 277-282, 2024.

144. Zhaomeng Gao, Yunzhe Zheng, Tianjiao Xin, Cheng Liu, Qiwendong Zhao, Yilin Xu, Yonghui Zheng, Xiaoling Lin, Hangbing Lyu and Yan Cheng. The Fluctuation Effect of Remnant Polarization in Hf_0.5Zr_0.5O₂ Capacitors at Elevated Temperatures, IEEE Electron Device Letters, 2024. DOI: 10.1109/LED.2024.3443619.

143. Zhaomeng Gao, Tianjiao Xin, Kai Du, Qiwendong Zhao, Yiwei Wang, Cheng Liu, Yilin Xu, Rui Wang, Guangjie Shi, Yunzhe Zheng, Yonghui Zheng, Yan Cheng and Hangbing Lyu. Polar axis orientation control of hafnium-based ferroelectric capacitors with in-situ AC electric bias during rapid thermal annealing, IEEE Symposium on VLSI Technology and Circuits (VLSI), 2024. DOI: 10.1109/VLSITechnologyandCir46783.2024.10631432.

142. Zhaomeng Gao, Tianjiao Xin, Cheng Liu, Yilin Xu, Yiwei Wang, Yunzhe Zheng, Rui Wang, Xiaotian Li, Yonghui Zheng, Kai Du, Diqing Su, Zhaohao Zhang, Huaxiang Yin, Weifeng Zhang, Chao Li, Xiaoling Lin, Haitao Jiang, Sannian Song, Zhitang Song, Yan Cheng, Hangbing Lyu. Reversible and Irreversible Polarization Degradation of Hf_0.5Zr_0.5O₂ Capacitors with Coherent Structural Transition at Elevated Temperatures, 2024 IEEE International Reliability Physics Symposium (IRPS). DOI: 10.1109/IRPS48228.2024.10529400.

141. Yonghui Zheng, Wenxiong Song, Zhitang Song, Yuanyuan Zhang, Tianjiao Xin, Cheng Liu, Yuan Xue, Sannian Song, Bo Liu, Xiaoling Lin, Vladimir G Kuznetsov, Ilya I Tupitsyn, Alexander V Kolobov, Yan Cheng. A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials, Advanced Science, 11 (9): 2301021, 2024.

140. Daliang He, Yonghui Zheng, Degong Ding, Hao Ma, Aixinye Zhang, Yan Cheng, Wen Zhao, Chuanhong Jin. Titanium Self-Intercalation Induced Formation of Orthogonal (1×1) Edge/Surface Reconstruction in 1T-TiSe₂: Atomic Scale Dynamics and Mechanistic Study. Nano Letters, 24 (12): 3835-3841, 2024.

139. Wen-Xiong Song, Qiongyan Tang, Jin Zhao, Muriel Veron, Xilin Zhou, Yonghui Zheng, Daolin Cai, Yan Cheng, Tianjiao Xin, Zhi-Pan Liu, Zhitang Song. Tuning the Crystallization Mechanism by Composition Vacancy in Phase Change Materials. ACS Applied Materials & Interfaces, 16 (12): 15023-15031, 2024.

138. Yiwei Wang, Qilan Zhong, Zhaomeng Gao, Yunzhe Zheng, Tianjiao Xin, Cheng Liu, Yilin Xu, Yonghui Zheng, Yan Cheng. Texture in atomic layer deposited Hf_0.5Zr_0.5O₂ ferroelectric thin films. Ceramics International, 2024. https://doi.org/10.1016/j.ceramint.2024.02.200.

137. Yunzhe Zheng, Yilin Xu, Fengrui Sui, Zhaomeng Gao, Ju Chen, Zhao Guan, Luqi Wei, Zhenyu Jia, Tianjiao Xin, Yiwei Wang, Cheng Liu, Rui Wang, Yonghui Zheng, Chao Li, Xiaoling Lin, Shijing Gong, Yan Cheng. Influence of interface on the domain polarization orientation in ferroelectric Hf_0.5Zr_0·5O₂ thin films. Ceramics International. 2024. https://doi.org/10.1016/j.ceramint.2024.03.055.

 2023年

136. Zhaomeng Gao, Weifeng Zhang, Qilan Zhong, Yonghui Zheng, Shuxian Lv, Qiqiao Wu, Yanling Song, Shengjie Zhao, Yunzhe Zheng, Tianjiao Xin, Yiwei Wang, Wei Wei, Xinqian Ren, Jianguo Yang, Chen Ge, Jiahua Tao, Yan Cheng, Hangbing Lyu. Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization, Device, 2023.

135. Yunzhe Zheng, Yuke Zhang, Tianjiao Xin, Yilin Xu, Shuangquan Qu, Junding Zheng, Zhaomeng Gao, Qilan Zhong, Yiwei Wang, Xiaoyu Feng, Yonghui Zheng, Yan Cheng, Ruiwen Shao, Fang Lin, Xiaoling Lin, He Tian, Rong Huang, Chungang Duan, Hangbing Lyu. Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf_{0. 5}Zr_{0. 5}O₂ ferroelectric thin films. Materials Today Nano, 24: 100406, 2023.

134. Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin. Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Science China Information Sciences, 66 (10): 200405, 2023.

133. Yue Peng, Wenwu Xiao, Fenning Liu, Chengji Jin, Yan Cheng, Luhua Wang, Yueyuan Zhang, Xiao Yu, Yan Liu, Yue Hao, Genquan Han. HfO₂–ZrO₂ Superlattice Ferroelectric Field-Effect Transistor with Improved Endurance and Fatigue Recovery Performance. IEEE Transactions on Electron Devices, 70 (7): 3979-3982.

132. Ben Wu, Tao Wei, Qianchen Liu, Yan Cheng, Yonghui Zheng, Ruirui Wang, Qianqian Liu, Miao Cheng, Wanfei Li, Jing Hu, Yun Ling, Bo Liu. Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory. Applied Physics Letters, 122: 22, 2023.

131. Jing Hu, Cong Lin, Yan Cheng, Yonghui Zheng, Tao Wei, Wanfei Li, Yun Ling, Qianqian Liu, Miao Cheng, Ruirui Wang, Sannian Song, Zhitang Song, Yinghui Wei, Bo Liu. Ultrafast SET/RESET operation for optoelectronic hybrid phase-change memory device cells based on Ge₂Sb₂Te₅ material using partial crystallization strategy. Applied Physics Letters, 123: 19, 2023.

130. Jun-Hui Yuan, Ge-Qi Mao, Kan-Hao Xue, Na Bai, Chengxu Wang, Yan Cheng, Hangbing Lyu, Huajun Sun, Xingsheng Wang, Xiangshui Miao. Ferroelectricity in HfO₂ from a Coordination Number Perspective. Chemistry of Materials, 2023, 35: 94-103.

129. Cheng Liu, Qiongyan Tang, Yonghui Zheng, Jin Zhao, Wenxiong Song, Yan Cheng. Nanotechnology, 2023, 34: 155703.

128. Cheng Liu, Yonghui Zheng, Tianjiao Xin, Yunzhe Zheng, Rui Wang, Yan Cheng. The Relationship between Electron Transport and Microstructure in Ge₂Sb₂Te₅ Alloy. Nanomaterials, 2023, 13: 582.

127. Peihuan Xu, Tao Wei, Jing Hu, Miao Cheng, Wanfei Li, Qianqian Liu, Ruirui Wang, Yun Ling, Yonghui Zheng, Yan Cheng, Bo Liu. GeTe/CrSb₂Te superlattice-like thin film for excellent thermal stability and high phase change speed. Journal of Alloys and Compounds, 2023, 942: 169073.

2022年

126.Y. Cheng#, Z.M. Gao#, K.H. Ye, H.W. Park, Y.H. Zheng, Y.Z. Zheng, J.F. Gao, M.H. Park, J.H. Choi, K.H. Xue, C.S. Hwang*, H.B. Lyu*. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO₂-based ferroelectric thin films. Nature Communications, 2022, 13: 645.

125.Y.H. Zheng#, T.J. Xin#, J. Yang, Y.Z. Zheng, Z.M. Gao, Y.W. Wang, Y.L. Xu, Y. Cheng*, K. Du, D.Q. Su, R.W. Shao, B.X. Zhou, Z. Yuan, Q.L. Zhong, C. Liu, R. Huang, X.D. Tang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. In-situ atomic-level observation of reversible first-order transition in Hf_0.5Zr_0.5O₂ ferroelectric film. IEEE International Electron Devices Meeting (IEDM), 2022: 6-3.

124.T.J. Xin#, Y.H. Zheng#, Y. Cheng*, K. Du, Y.W. Wang, Z.M. Gao, D.Q. Su, Y.Z. Zheng, Q.L. Zhong, C. Liu, R. Huang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. Atomic visualization of the emergence of orthorhombic phase in Hf_0.5Zr_0.5O₂ ferroelectric film with in-situ rapid thermal annealing.Symposium on VLSI Technology, 2022: T7-4.

123.C. Liu#, Q.Y. Tang#, Y.H. Zheng*, B. Zhang, J. Zhao, W.X. Song, Y. Cheng*, Z.T. Song. The origin of hexagonal phase and its evolution process in Ge₂Sb₂Te₅ alloy. APL Materials, 2022, 10: 021102.

122.刘成，赵进，辛天骄，郑勇辉，宋文雄，成岩. 功能材料与器件学报，2022.

121.许亦琳，辛天骄，郑赟喆，高兆猛，郑勇辉，成岩. 功能材料与器件学报，2022.

120.C. Yoo, J.W. Jeon, S. Yoon, Y. Cheng, G. Han, W. Choi, B. Park, G. Jeon, S. Jeon, W. Kim, Y. Zheng, J. Lee, J. Ahn, S. Cho, S.B. Clendenning, I.V. Karpov, Y.K. Lee, J.H. Choi, C.S. Hwang. Atomic layer deposition of Sb₂Te₃/GeTe superlattice film and its melt-quenching-free phase-transition mechanism for phase-change memory. Advanced Materials, 2022, 2207143.

119.P. Yuan, G.Q. Mao, Y. Cheng, K.H. Xue, Y.Z. Zheng, Y. Yang, P.F. Jiang, Y.N. Xu, Y. Wang, Y.H. Wang, Y.X. Ding, Y.T. Chen, Z.W. Dang, L. Tai, T.C. Gong, Q. Luo, X.S. Miao, Q. Liu. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Research, 2022, 15: 3667-3674.

118.Y. Peng, W.W. Xiao, Y. Liu, C.J. Jin, X.R. Deng, Y.Y. Zhang, F.N. Liu, Y.Z. Zheng, Y. Cheng, B. Chen, X. Yu, Y. Hao, G.Q. Han. HfO₂-ZrO₂ superlattice ferroelectric capacitor with improved endurance performance and higher fatigue recovery capability. IEEE Electron Device Letters, 2022, 43: 216-219.

117.Z. Shen, L. Liao, Y. Zhou, K. Xiong, J.H. Zeng, X.D. Wang, Y. C. J.J. Liu, T.L. Guo, S.K. Zhang, T. Lin, H. Shen, X.J. Meng, Y.W. Wang, Y. Cheng, J. Yang, P. Chen, L.F. Wang, X.D. Bai, J.H. Chu, J.L. Wang. Epitaxial growth and phase evolution of ferroelectric La-doped HfO₂ films. Applied Physics Letters, 2022, 120: 162904.

116.J. Hu, C. Lin, L.Y. Peng, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, S.N. Song, Z.T. Song, J. Zhou, Y. Cheng, Y.H. Zheng, Z.M. Sun, B. Liu. Cr-doped Sb2Te materials promising for high performance phase-change random access memory. Journal of Alloys and Compounds, 2022, 908: 164593.

115.C. Lin, J. Hu, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, S.N. Song, Z.T. Song, Y. Cheng, Y.H. Zheng, B. Liu. Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material. Materials Letters, 2022, 315: 131977.

114.D.G. Ding, S. Wang, Y.P. Xia, P. Li, D.L. He, J.Q. Zhang, S.W. Zhao, G.H. Yu, Y.H. Zheng, Y. Cheng, M.H. Xie, F. Ding, C.H. Jin. Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au (111) Substrate. ACS Nano, 2022, 16: 17356-17364.

113.F.R. Sui, M. Jin, Y.Y. Zhang, J. Hong, Y. Cheng, R.J. Qi, F.Y. Yue, R. Huang. Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe. Journal of Physics: Condensed Matter, 2022, 34: 224006.

112.Z. Guan, Y.F. Zhao, X.T. Wang, N. Zhong, X. Deng, Y.Z. Zheng, J.J. Wang, D.D. Xu, R.R. Ma, F.Y. Yue, Y. Cheng, R. Huang, P.H. Xiang, Z.M. Wei, J.H. Chu, C.G. Duan. Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in Van der Waals layered GeSe. ACS Nano, 2022, 16: 1308-1317.

2021年

111.Y.Z. Zheng#, Y.H. Zheng#, Z.M. Gao, J.H. Yuan, Y. Cheng*, Q.L. Zhong, T.J. Xin, Y.W. Wang, C. Liu, Y.R. Huang, R. Huang, X.S. Miao, K.H. Xue^*, H.B. Lyu^*. Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂ films: vacancy generation and lattice dislocation. IEEE International Electron Devices Meeting (IEDM), 2021: 33-5.

110.Y.Z. Zheng#, C.R. Zhong#, Y.H. Zheng, Z.M. Gao, Y. Cheng*, Q.L. Zhong, C. Liu, Y.W. Wang, R.J. Qi, R. Huang, H.B. Lyu^*. In-situ atomic visualization of structural transformation in Hf_0.5Zr_0.5O₂ ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase. Symposium on VLSI Technology, 2021: T16-3. 

109.Y. Cheng*, Y.H. Zheng, Z. T. Song, Reversible switching in bicontinuous structure for phase change random access memory application. Nanoscale, 2021, 13: 4678-4684.

108.Y.H. Zheng, Z. Chen, H. Lu, Y. Cheng*, X. Chen, Y.B. He*, Z.L. Zhang*. The formation of TiO₂/VO₂ multilayer structure via directional cationic diffusion. Nanoscale, 2021, 13: 7783-7791.

107.Q.L. Zhong, Y.W. Wang, Y. Cheng*, Z.M. Gao, Y.Z. Zheng, T.J. Xin, Y.H. Zheng, R. Huang, H.B. Lyu*. Optimization of the in situ biasing FIB sample preparation for hafnia-based ferroelectric capacitor. Micromachine, 2021, 12: 1436.

106.Z.M. Gao, Y.B. Luo, S.X. Lyu, Y. Cheng, Y.H. Zheng, Q.L. Zhong, W.F. Zhang*, H.B. Lyu*. Identification of ferroelectricity in capacitor with ultra-thin (1.5 nm) Hf_0.5Zr_0.5O₂ film. IEEE Electron Device Letters, 2021, 42: 1301-1306.

105.Z.T. Song, D.L. Cai, Y. Cheng, L. Wang, S.L. Lv, T.J. Xin, G.M. Feng. 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip. Nanoscale, 2021, 13: 10455-10461.

104.T.C. Gong, L. Tao, J.K. Li, Y. Cheng, Y.N. Xu, W. Wei, P.F. Jiang, P. Yuan, Y. Wang, Y.T. Chen, Y.X. Ding, Y. Yang, Y. Wang, B. Chen, Q. Luo, S. S Chung, S.X. Du, M. Liu. 10⁵× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications. Symposium on VLSI Technology, 2021: T16-1.

103.M.H. Ao, S.Z. Zheng, Q.L. Zhong, W.D. Zhang, X. Hou, X.J. Chai, C. Wang, H.C. Fan, J.W. Lian, Y. Cheng, J. Wang, J. Jiang, A.Q. Jiang. In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films. ACS Applied Materials Interfaces, 2021, 13: 33291-33299.

102.W.Q. Xu, Y.H. Zheng, Y. Cheng, R.J. Qi*, H. Peng, H.C. Lin, R. Huang*. Understanding the effect of Al doping on the electrochemical performance improvement of the LiMn₂O₄ cathode material. ACS Applied Materials Interfaces, 2021, 13: 45446-45454.

101.C. Li, H.L. Song, Y. Cheng, R.J. Qi, R. Huang, C.Q. Cui, Y.F. Wang, Y. Zhang, L. Miao. Highly Suppressed Thermal Conductivity in Diamond-like Cu₂SnS₃ by Dense Dislocation. ACS Applied Energy Materials, 2021, 4: 8728-8733.

100.W.Q. Xu, Y.H. Zheng, L.N. Lin, W.B. Lei, Z.G. Wang, H.L. Song, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, Z.Z. Yang, R. Huang. Atomic Insights into Surface Orientations and Oxygen Vacancies in the LiMn₂O₄ Cathode for Lithium Storage. Journal of Alloys and Compounds, 2021, 870: 159387.

99.L.N. Lin, Q.L. Zhong, Y.Z. Zheng, Y. Cheng, R.J. Qi, R. Huang. Size effect of Au nanoparticles in Au-TiO2-x photocatalyst. Chemical Physics Letters, 2021, 770: 138457.

98.Q.L. Zhong, X. Deng, L.N. Lin, H.L. Song, Y.Z. Zheng, Y. Cheng, P.H. Xiang, N. Zhong, R.J. Qi, C.G. Duan, R. Huang. Revealing a high-density three-dimensional Ruddlesden-Popper-type fault network in an SmNiO₃ thin film. Journal of Materials Research, 2021, 36: 1637-1645.

97.W.Q. Xu, H.K. Li, Y.H. Zheng, W.B. Lei, Z.G. Wang, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, F.Y. Yue, R. Huang. Atomic Insights into Ti Doping on the Stability Enhancement of Truncated Octahedron LiMn₂O₄ Nanoparticles. Nanomaterials, 2021, 11: 508.

2020年

96.Q. Luo#, Y. Cheng#, J.G. Yang, R.R. Cao, H.L. Ma, Y. Yang, R. Huang, W. Wei, Y.H. Zheng, T.C. Gong, J. Yu, X.X. Xu, P. Yuan, X.Y. Li, L. Tai, H.R. Yu, D.S. Shang, Q. Liu, B. Yu, Q.W. Ren, H.B. Lv*, M. Liu*. A highly CMOS compatible hafnia-based ferroelectric diode. Nature Communications, 2020, 11: 1391.

95.W.X. Song#, Y. Cheng#, D.L. Cai, Q.Y. Tang, Z.T. Song*, L.H. Wang, J. Zhao, T.J. Xin, Z. P. Liu. Improving the performance of phase-change memory by grain refinement. Journal of Applied Physics, 2020, 128: 075101.

94.Y. Cheng*, D.L. Cai#, Y.H. Zheng#, S. Yan, L. Wu, C. Li, W.X Song*, T.J. Xin, S.L. Lv, R. Huang, H.B. Lv, Z.T. Song*, S.L. Feng. Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory. ACS Applied Materials & Interfaces, 2020, 12: 23051-23059.

93.C.R. Zhong#, R.J. Qi#, Y.H. Zheng, Y. Cheng*, W.X. Song*, R. Huang. The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector. Micromachines, 2020, 11: 588.

92.Q.Y. Tang#, T.Z. He#, K. Yu, Y. Cheng*, R.J. Qi*, R. Huang, J. Zhao, W.X. Song, Z.T. Song. The effect of thickness on texture of Ge₂Sb₂Te₅ phase-change films. Journal of Materials Science: Materials in Electronics, 2020, 31:5848-5853.

91.Y.H. Zheng#, R.J. Qi#, Y. Cheng*, Z.T. Song. The crystallization mechanism of Zirconium doped Sb₂Te₃ material for phase change random-access memory application.Journal of Materials Science: Materials in Electronics, 2020, 31:5861-5865.

90.R.J. Qi#, Y. Cheng*. Synthesis of Se nanowires at room temperature using selenourea as Se source. Journal of Materials Science: Materials in Electronic, 2020, 31: 5843-5847.

89.Y. Xue, Y. Cheng, Y.H. Zheng, S. Yan, W.X. Song, S.L. Lv, S.N. Song*, Z.T. Song*. Phase change memory based on Ta-Sb-Te alloy-towards a universal memory. Materials Today Physics, 2020, 15: 100266.

88.H.L. Song, C. Li, C.-K. Wang, J.-C. Yang, J.J. Lin, L. Sun, Y. Cheng, R.J. Qi, R. Huang, Y.-H. Chu, C.-G. Duan. Revealing a metastable cubic phase in CoFe₂O₄–SrTiO₃ three-dimensional network heteroepitaxial nanostructure. Journal of Applied Physics, 2020, 128: 225303.

87.L.N. Lin, X.Y. Feng, D.P. Lan, Y. Chen, Q.L. Zhong, C. Liu, Y. Cheng, R.J. Qi, J.P. Ge, C.Z. Yu, C.-G. Duan, R. Huang. Coupling Effect of Au Nanoparticles with the Oxygen Vacancies of TiO_2-x for Enhanced Charge Transfer. Journal of Physical Chemistry C, 2020, 124: 23823-23831.

86.C. Liu#, J. Wang#, J.J. Wan*, Y. Cheng, R. Huang, C.Q. Zhang, W.L. Hu, G.F. Wei*, C.Z. Yu*. Amorphous Metal–Organic Framework‐Dominated Nanocomposites with Both Compositional and Structural Heterogeneity for Oxygen Evolution.Angewandte Chemie-International Edition, 2020, 59: 3630-3637.

2019年

85.Y.H. Zheng, Y. Wang, T.J. Xin, Y. Cheng*, R. Huang, P. Liu, M. Luo, Z.L. Zhang, S.L. Lv, Z.T. Song*, S.L. Feng. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge₂Sb₂Te₅. Communications Chemistry, 2019, 2: 13.

84.K. Ren*, Y. Cheng*, M.J. Xia, S.L. Lv, Z.T. Song. In-situ observation of Ge₂Sb₂Te₅ crystallization at the passivated interface. Ceramics International, 2019, 45: 19542-19546.

83.Q. Luo, J. Yu, X.M. Zhang, K.H. Xue, J.H. Yuan, Y. Cheng, T.C. Gong, H.B. Lv*, X.X. Xu, P. Yuan, J.H. Yin, L. Tai, S.B. Long, Q. Liu, X.S. Miao, J. Li, M. Liu*. Nb_1-xO₂ based universal selector with ultra-high endurance (>10¹²), high speed (10ns) and excellent V_th stability, 2019 Symposium on VLSI Technology, 2019, T236-T237.

82.W.X. Zhang, H. Song, Y. Cheng, C. Liu, C.H. Wang, M.A.N. Khan, H. Zhang, J.Z. Liu, C.Z. Yu*, L.J. Wang, J.S. Li*. Core–Shell Prussian Blue Analogs with Compositional Heterogeneity and Open Cages for Oxygen Evolution Reaction. Advanced Science. 2019, 6: 1801901.

81.X. Chen, X.Q. Liu*, Y. Cheng, Z.T. Song*. The impact of vacancies on the stability of cubic phases in Sb-Te binary compounds. NPG Asia Materials, 2019, 11: 40.

80.Y. Wang, T.Q. Guo, G.Y. Liu, T. Li, S.L. Lv, S.N. Song, Y. Cheng, W.X. Song, K. Ren, Z.T. Song*. Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power-Consumption. ACS Applied Materials & Interfaces, 2019, 11: 10848-10855.

79.L.N Lin, Y.L. Ma, J.B. Wu*, F. Pang, J.P. Ge*, S. Sui, Y.F. Yao, R.J. Qi, Y. Cheng, C.G. Duan, J.H. Chu, R. Huang*, Origin of Photocatalytic Activity in Ti⁴⁺/Ti³⁺ Core–Shell Titanium Oxide Nanocrystals. Journal of Physical Chemistry C, 2019, 123, 34: 20949.

78.C.R. Zhong, L.N. Lin, R.J. Qi, Y. Cheng, X.S. Gao, R. Huang*. Plan-view Sample Preparation of a Buried Nanodots Array by FIB with Accurate EDS Positioning in Thickness Direction. Ultramicroscopy, 2019, 207: 112840.

77.M.X. Jia, Z.Q. Ren, Y.D. Liu, Y. Cheng, R. Huang, P.H. Xiang, X.D. Tang, B.B. Tian, N. Zhong*, C.G. Duan. Ferroelectric polarization-controlled resistive switching in BaTiO₃/SmNiO₃ epitaxial heterostructures. Applied Physics Letters, 2019, 114: 102901.

76.Y. Wang, T.B. Wang, G.Y. Liu, T.Q. Guo, T. Li, S.L. Lv, Y. Cheng, S.N. Song, K. Ren, Z.T. Song*. High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping. Scripta Materialia, 2019, 164: 25-29.

2018年

75.X. Chen, Y.H. Zheng, M. Zhu, K. Ren, Y. Wang, T. Li, G.Y. Liu, T.Q. Guo, L. Wu, X.Q. Liu, Y. Cheng*, Z.T. Song. Scandium doping brings speed improvement in Sb₂Te alloy for phase change random access memory application. Scientific Reports, 2018, 8: 6839.

74.Q. Luo, T.C. Gong, Y. Cheng, Q.Z. Zhang, H.R. Yu, J. Yu, H.L. Ma, X.X. Xu, K.L. Huang, X. Zhu, D.N. Dong, J.H. Yin, P. Yuan, L. Tai, J.F. Gao, J.F. Li, H.X. Yin, S.B. Long, Q. Liu, H.B. Lv*, M. Liu^*, Hybrid 1T e-DRAM and e-NVM realized in one 10 nm node Ferro FinFET device with charge trapping and domain switching effects. IEEE International Electron Devices Meeting (IEDM), 2018.

73.C. Li, H.L. Song, Y.W. Shen, Y.F. Wang, Y. Cheng, R.J. Qi, S.Y. Chen, C.G. Duan, R. Huang. Evolution of cation ordering and crystal defects controlled by Zn substitutions in Cu₂SnS₃ ceramics, AIP Advances, 2018, 8: 105322.

72.C. Li, Y.W. Shen, H.L. Song, Y.F. Wang, S.Y. Chen, R.J. Qi, Y. Cheng, C.G. Duan, R. Huang. Microstructure of Cu₂S nanoprecipitates and its effect on electrical and thermal properties in thermoelectric Cu₂Zn_0.2Sn_0.8S₃ ceramics. AIP Advances, 2018, 8: 085105.

71.T.Q. Guo, S.N. Song, Z.T. Song, X.L. Ji, Y. Xue, L.L. Chen, Y. Cheng, B. Liu, L.C. Wu, M. Qi, S.L. Feng. SiC-Doped Ge₂Sb₂Te₅ Phase-Change Material: A Candidate for High-Density Embedded Memory Application. Advanced Electronic Materials, 2018, 4: 1800083.

70.Y. Wang, Y.H. Zheng, G.Y. Liu, T. Li, T.Q. Guo, Y. Cheng, S.L. Lv, S.N. Song, K. Ren^*, Z.T. Song^*. Scandium doped Ge₂Sb₂Te₅ for high-speed and low-power-consumption phase change memory. Applied Physics Letters, 2018, 112: 133104.

69.Y. Wang, T.B. Wang, Y.H. Zheng, G.Y. Liu, T. Li, S.L. Lv, W.X. Song, S.N. Song, Y. Cheng, K. Ren^*, Z.T. Song, Atomic scale insight into the effects of Aluminum doped Sb₂Te for phase change memory application. Scientific Reports, 2018, 8: 15136.

2017年

68.Y.H. Zheng, Y. Cheng*, R. Huang, R.J. Qi, F. Rao*, K.Y. Ding, W.J. Yin, S.S. Song, W.L. Liu, Z.T. Song, S.L. Feng. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge₂Sb₂Te₅ Thin Film. Scientific Reports, 2017, 7: 5915.

67.K. Ren, Y. Cheng*, X. Chen, K.Y. Ding, S.L. Lv, W.J. Yin, X.H. Guo, Z.G. Ji, Z.T. Song*. Carbon layer application in phase change memory to reduce power consumption and atomic migration. Materials Letters, 2017, 206: 52-55.

66.L. Zhang, S.N. Song, H. Lin, Y. Cheng, W. Xi, L. Li, Y. He, Z.T. Song. Local structure characteristics of Sb₂Te₃ films studied by reverse Monto Carlo modeling. Nuclear Science and Techniques, 2017, 28: 38.

65.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, Y. Cheng, L.C. Wu, B. Liu, S.L. Feng. Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory. Journal of Materials Science: Materials in Electronics, 2017, 28: 923-927.

64.Y. Liu, H. Wang, B. Liu, Y. Cheng, S.N. Song, L.C. Wu, D. Zhou, Z.T. Song. Trapping analysis and countermeasure for arsenic auto-doping in 40-nm epitaxial diode arrays and CMOS integration. Materials Science in Semiconductor Processing, 2017, 71: 326-331.

63.G.Y. Liu, L.C. Wu, M. Zhu, Z.T. Song, F. Rao, S.N. Song, Y. Cheng. The investigations of characteristics of Sb₂Te as a base phase-change material. Solid-State Electronics, 2017, 135: 31-36.

62.G.Y. Liu, L.C. Wu, Z.T. Song, F. Rao, S.N. Song, Y. Cheng. Stability of Sb₂Te Crystalline Films for Phase Change Memory. Materials Science Forum, 2017, 898: 1829-1833.

2016年

61.Y.H. Zheng, M.J. Xia, Y. Cheng*, F. Rao*, K.Y. Ding, W.L. Liu, J. Yu, Z.T. Song, S.L. Feng. Direct observation of metastable face-centered cubic Sb₂Te₃ crystal. Nano Research, 2016, 11: 3453-3462.

60.Y.H. Zheng, Y. Cheng*, M. Zhu, X.L. Ji, Q. Wang, S.N. Song, Z.T. Song, W.L. Liu, S.L. Feng. A candidate Zr-doped Sb₂Te alloy for phase change memory application. Applied Physics Letters, 2016, 108: 052107.

59.Y.H. Zheng, Y. Cheng*, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song, S.L. Feng. Self-precipitated process of Te nanowire from Zr-doped Sb₂Te₃ film. Materials Science Forum, 2016, 848: 489.

58.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng. Surface etching mechanism of carbon-doped Ge₂Sb₂Te₅ phase change material in fluorocarbon plasma. Applied Physics A-Materials Science & Processing, 2016, 122: 1-6.

57.K.Y. Ding, F. Rao*, S.L. Lv, Y. Cheng, W.L. Liu, Z.T. Song. Low-energy amorphization of Ti₁Sb₂Te₅ phase change alloy induced by TiTe₂ nano-lamellae. Scientific Reports, 2016, 6: 30645.

56.S.N. Song, L.L Shen, Z.T. Song, D.N. Yao, T.Q. Guo; L. Li, B. Liu, L.C. Wu, Y. Cheng, Y.Q. Ding, S.L. Feng. Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180N.

55.L.L. Shen, S.N. Song, Z.T. Song, L. Li, T.Q. Guo, B. Liu, L.C. Wu, Y. Cheng, S.L. Feng. Reactive ion etching effects on carbon-doped Ge₂Sb₂Te₅ phase change material in CF₄/Ar plasma. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180M.

54.Y.J. Chen, B. Zhang, Q.Q. Ding, Q.S. Deng, Y. Cheng, Z.T. Song, J.X. Li, Z. Zhang, X.D. Han. Microstructure evolution of the phase change material TiSbTe. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180B.

53.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, S.N. Song, Y. Cheng, Z.T. Song, S.L. Feng. Electrical properties of Cr-doped Sb₂Te₃ phase change material. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180H.

52.Z.H. Zhang, S.N. Song, Z.T. Song, L. Li, L.L. Shen, T.Q. Guo, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng. Performance Improvement of Phase Change Memory Cell by using a Tantalum Pentoxide Buffer Layer. Materials Science Forum, 2016, 848: 425-429.

51.L.L. Cao, L.C. Wu, Z.T. Song, W.Q. Zhu, Y.H. Zheng, Y. Cheng, S.N. Song, Z.Y. Ma, L. Xu. Investigation of Ni doped Ge-Te materials for high temperature phase change memory applications. Materials Science Forum, 2016, 848: 460-465.

50.Y.H. Zheng, Y. Cheng, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song, S.L. Feng. Self-precipitated Process of Te Nanowire from Zr-doped Sb2Te3 Film. Materials Science Forum, 2016, 848: 489-493.

2015年

49.Y. Cheng, S.N. Song, Z.H. Zhang, Z.T. Song, B. Liu, S.L. Feng, Z. Zhang, Electron beam annealing for component optimization in Si-Sb-Te material. Materials Science Forum, 2015, 815: 44-48.

48.F. Rao, Z.T. Song, Y. Cheng, X.S. Liu, M.J. Xia, W. Li, K.Y. Ding, X.F. Feng, M. Zhu, S.L. Feng, Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material. Nature communications, 2015, 6:10040.

47.M. Zhu, M.J. Xia, Z.T. Song, Y. Cheng, L.C. Wu, F. Rao, S.N. Song, M. Wang, Y.G. Lv, S.L. Feng, Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions. Nanoscale, 2015, 7: 9935-9944.

46.M.J. Xia, M. Zhu, Y.C. Wang, Z.T. Song, F. Rao, L.C. Wu, Y. Cheng, S.N. Song, Ti−Sb−Te alloy: a candidate for fast and long-life phase-change memory. ACS Applied Materials & Interfaces, 2015, 7: 7627-7634.

45.L. Li, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu, S.L. Feng, Investigation of Cr_0.06(Sb₄Te)_0.94 alloy for high-speed and high data-retention phase change random access memory applications. Applied Physics A, 2015, 120: 537.

44.L.L. Shen, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, Y.Q. Zhu, X.H. Guo, W.J. Yin, D.N. Yao, B. Liu, S.L. Feng, Characteristics and mechanism of phase change material W_0.03Sb₂Te etched by Cl₂/BCl₃ inductively coupled plasmas. Thin Solid Films, 2015, 593: 67-70.

43.L. Li, S.N. Song, Z.H. Zhang, Y.Q. Zhu, Z.T. Song, Y. Cheng, S.L. Lv, B. Liu, L.L. Chen, Thickness dependent nano-crystallization in Ti_0.43Sb₂Te₃ films and its effect on devices. Thin Solid Films, 2015, 590: 13-16.

42.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, Q. Zhang, S.N. Song, Y. Cheng, Z.T. Song, Cr-doped Ge₂Sb₂Te₅ for ultra-long data retention phase change memory. Applied Physics Letters, 2015, 107: 222101.

41.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, M. Zhu, S.N. Song, S.L. Lv, Y. Cheng, Z.T. Song, S.L. Feng, Characterization of Cr-doped Sb₂Te₃ films and their application to phase-change memory. physica status solidi (RRL) - Rapid Research Letters, 2015, 9: 470-474.

40.S.N. Song, D.N. Yao, Z.T. Song, L.N. Gao, Z.H. Zhang, L. Li, L.L. Shen, L.C. Wu, B. Liu, Y. Cheng, S.L. Feng, Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon. Nanoscale Research Letters, 2015, 10:89.

2014年

39.宋志棠，成岩，相变存储器及其发展。《功能材料信息》，2014年第5期。

38.Y.C. Wang, X.G. Chen, Y. Cheng, X.L. Zhou, S.L. Lv, Y.F. Chen, Y.Q. Wang, M. Zhou, H.P. Chen, Y.Y. Zhang, Z.T. Song, G.M. Feng, RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming. IEEE Electron Device Letters, 2014, 35: 536-538.

37.Y.C. Wang, Y.F. Chen, D.L. Cai, Y. Cheng, X.G. Chen, Y.Q. Wang, M.J. Xia, M. Zhou, G.Z. Li, Y.Y. Zhang, D. Gao, Z.T. Song, G.M. Feng, Understanding the early cycling evolution behaviors for phase change memory application. Journal of Applied Physics, 2014, 116: 204503.

36.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, C. Peng, L. Zhang, D.C. Cao, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, Characteristics and mechanism of Al_1.3Sb₃Te etched by Cl₂/BCl₃ inductively coupled plasmas. Microelectronic Engineering, 2014, 115: 51-54.

35.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, M. Zhu, X.Y. Li, Y.Q. Zhu, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, S.L. Feng, D. Zhou, Etching of new phase change material Ti_0.5Sb₂Te₃ by Cl₂/Ar and CF₄/Ar inductively coupled plasmas.Applied Surface Science, 2014, 311: 68-73.

34.Z.H. Zhang, Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, B. Liu, Y.Q. Zhu, D. Zhou, S.L. Feng, Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application. Journal of Applied Physics, 2014, 116: 074304.

33.X.P. Wang, N.K. Chen, X.B. Li,* Y. Cheng, X.Q. Liu, M.J. Xia, Z.T. Song, X.D. Han, S.B. Zhang*, H.B. Sun*, Role of the nano amorphous interface in the crystallization of Sb₂Te₃ towards non-volatile phase change memory: insights from first principles. Physical Chemistry Chemical Physics, 2014, 16: 10810.

2013年

32.Y. Cheng, Y.F. Gu, Z.T. Song, S.N. Song, F. Rao, L.C. Wu, B. Liu, S.L. Feng, Investigation of Sb-rich Sb-Te binary films used as phase change material. In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820H.

31.Y.G. Lu, S.N. Song, Z.T. Song, Y. Cheng, L.C. Wu, B. Liu, Crystallization behavior of Ge₂Te₃-TiO₂ film for phase-change random access memory application, In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013, 8782: 87820K.

30.Z.H. Zhang, C. Peng, S.N. Song, Z.T. Song, Y. Cheng, K. Ren, X.Y. Li, F. Rao, B. Liu, S.L. Feng. Characterization of Cu doping on GeTe for phase change memory application. Journal of Applied Physics, 2013, 114: 244311.

29.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, F. Rao, L.C. Wu, B. Liu, B. Chen, Y.G. Lu, Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. Applied Physics Letters, 2013, 103: 142112.

28.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, B. Chen, Characterization of the thermal properties for Si-implanted Sb₂Te₃ phase change material. Applied Physics Letters, 2013, 102: 252106.

27.Y.F. Gu, S.N. Song, Z.T. Song, B.S. Yuan, Y. Cheng, Z.H. Zhang, B. Liu, S.L. Feng, Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory, Applied Physics Letters, 2013, 102: 103110.

26.C. Peng, L.C. Wu, F. Rao, Z.T. Song, S.L. Lv, X.L. Zhou, X.F. Du, Y. Cheng, P.X. Yang, J.H. Chu, A simple method used to evaluate phase-change materials based on focused-ion beam technique. Applied Physics Letters, 2013, 102: 203510.

25.X.L. Zhou, L.C. Wu, Z.T. Song, Y. Cheng, F. Rao, K. Ren, S.N. Song, B. Liu, S.L. Feng, Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory. Acta Materialia, 2013, 61: 7324-7333.

24.M. Zhu, L.C. Wu, F. Rao, Z.T. Song, X.L. Ji, D.N. Yao, Y. Cheng, S.L. Lv, S.N. Song, B. Liu, L. Xu, The effect of Titanium doping on the structure and phase change characteristics of Sb₄Te.Journal of Applied Physics, 2013, 114: 124302.

23.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.Y. Liu, X.F. Du, B. Liu, S.L. Feng, Reactive ion etching of Si_xSb₂Te in CF₄/Ar plasma for nonvolatile phase-change memory device. Journal of Nanoscience and Nanotechnology, 2013, 13: 1594-1597.

22.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, L.C. Wu, B. Liu, S.L. Feng, Study on GeGaSbTe film for long data retention phase change memory application. Journal of Non Crystalline Solids, 2013, 381: 54.

2012年

21.N. Yan, Y. Cheng, X.Q. Liu, Z.T. Song, Z. Zhang, In situ transmission electron microscopy investigation of Si_xSb_100-x phase-change materials.Materials Letters, 2012, 84: 20-23.

20.F. Rao, Z.T. Song, Y. Cheng, M.J. Xia, K. Ren, L.C. Wu, B. Liu, S.L. Feng, Investigation of changes in band gap and density of localized states on phase transition for Ge₂Sb₂Te₅ and Si_3.5Sb₂Te₃ materials. Acta Materialia, 2012, 60: 323-328.

19.K. Ren, F. Rao, Z.T. Song, S.L. Lv, Y. Cheng, L.C. Wu, C. Peng, X.L. Zhou, M.J. Xia, B. Liu, S.L. Feng, Pseudobinary Al₂Te₃-Sb₂Te₃ material for high speed phase change memory application. Applied Physics Letters, 2012, 100: 052105.

18.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.F. Du, B. Liu, S.L. Feng, Si_xSb₂Te materials with stable phase for phase change random access memory applications.Journal of Applied Physics, 2012, 111: 054319.

17.L. Zhang, L.X. Gu, X.D. Han, H. Huang, Y.N. Dai, Y. Cheng, Y. Wang, Z. Zhang, Y.Q. Wu, B. Liu, Z.T. Song, The influence of sputtering power on phase-change films. Electrochemical and Solid-State Letters, 2012, 15: H205.

16.Y.G. Lu, S.N. Song, Z.T. Song, W.C Ren, Y.L. Xiong, F. Rao, L.C. Wu, Y. Cheng, B. Liu, Superlattice-like GaSb/Sb₂Te₃ films for low-power phase change memory. Scripta Materialia, 2012, 66: 702-705.

15.X. Zhang, F. Rao, B. Liu, C. Peng, X.L. Zhou, D.N. Yao, X.H. Guo, S.N Song, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, Z.T. Song, S.L. Feng. Dry etching of new phase-change material Al_1.3Sb₃Te in CF₄/Ar plasma, Journal of Semiconductors, 2012, 33: 102003.

14.X. Zhang, B. Liu, C. Peng, F. Rao, X.L. Zhou, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, D.N. Yao, Z.T. Song, S.L. Feng. Germanium Nitride as a buffer layer for phase change memory, Chinese Physics Letters, 2012, 29: 107201.

2011年

13.Y. Cheng, Z.T. Song, Y.F. Gu, S.N. Song, F. Rao, L.C. Wu, B. Liu, S.L Feng, Influence of silicon on the thermally induced crystallization process of Si-Sb₄Te phase change materials. Applied Physics Letters, 2011, 99: 261914.

12.X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, Y. Cheng, C. Peng, D.N. Yao, S.N. Song, B. Liu, S.L. Feng, B. Chen, Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. Applied Physics Letters, 2011, 99: 032105.

11.F. Rao, Z.T. Song, K. Ren, X.L. Zhou, Y. Cheng, L.C. Wu, B. Liu, Si-Sb-Te materials for phase change memory applications. Nanotechnology, 2011, 22: 145702.

10.T. Zhang, Z.T. Song, Y.F. Gu, Y. Cheng, B. Liu, S.L. Feng, Mechanism of oxidation on Si₂Sb₂Te₅ phase change material and its application. Japanese Journal of Applied Physics, 2011, 50: 020202.

9.Y.F. Gu, Y. Cheng, S.N. Song, T. Zhang, Z.T. Song, Y.X. Liu, X.F. Du, B. Liu, S.L Feng, Advantages of Si_xSb₂Te phase-change material and its applications in phase-change random access memory. Scripta Materialia, 2011, 65: 622-625.

8.K. Ren, F. Rao, Z.T. Song, Y. Cheng, L.C. Wu, X.L. Zhou, Y.F. Gong, M.J. Xia, B. Liu, S.L. Feng, Study on the crystallization behaviors of Si₂Sb₂Te_x materials. Scripta Materialia, 2011, 64: 685-688.

7.L.C. Wu, X.L. Zhou, Z.T. Song, M. Zhu, Y. Cheng, F. Rao, S.N. Song, B. Liu, S.L. Feng. Sb-rich Si-Sb-Te phase-change material for phase-change random access memory applications, IEEE Transactions on Electron Devices. 2011, 58: 4423-4426.

6.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, Y. Cheng, B. Liu, Crystallization process of amorphous GaSb₅Te₄ film for high-speed phase change memory. Applied Physics Express, 2011, 4: 094102.

5.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, C. Peng, Y. Cheng, B. Liu. Investigation of HfO₂ doping on GeTe for phase change memory. Solid State Sciences, 2011, 13: 1943-1947.

4.X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, K. Ren, Y. Cheng, B. Liu, D.N. Yao, S.L. Feng, B. Chen. Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation. MRS Online Proceeding Library (OPL), 2011, 1337.

2010年之前

3.Y. Cheng, N. Yan, X.D. Han, Z. Zhang, T. Zhang, Z.T. Song, B. Liu, S.L. Feng, Thermally induced phase separation of Si-Sb-Te alloy. Journal of Non-Crystalline Solids, 2010, 356: 884-888.

2.Y. Cheng, X.D. Han, X.Q. Liu, K. Zheng, Z. Zhang, T. Zhang, Z.T. Song, B. Liu, S.L Feng. Self- extrusion of Te-nanowire from Si-Sb-Te thin films. Applied Physics Letters, 2008, 93: 183113.

1.T. Zhang, Y. Cheng, Z.T. Song, B. Liu, S.L Feng, X.D. Han, Z. Zhang, B. Chen. Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process. Scripta Materialia, 2008, 58: 977-980.

国家发明专利授权：

1.国家发明专利授权：成岩，郑勇辉，齐瑞娟，黄荣，张媛媛，一种多层存储结构透射电子显微镜原位电学测试单元制备方法，申请日期：2019年10月22日，公开日期：2020年2月14日，授权日期：2021年10月12日，专利号：ZL 201911006116.5，专利权人：华东师范大学。

2.国家发明专利授权：成岩，黄荣，齐瑞娟，透射电镜和压电力显微镜通用的氮化硅薄膜窗口制备方法，申请日期：2018年11月13日，公开日期：2019年4月16日，授权日期：2020年6月16日，专利号：ZL 201811343252.9，专利权人：华东师范大学。

3.国家发明专利授权：成岩，黄荣，齐瑞娟，用于透射电镜原位通电芯片的拥有纳米级间距小电极的材料测试单元制备方法，申请日期：2018年3月13日，公开日期：2018年8月31日，授权日期：2020年1月7日，专利号：ZL 201810203499.4，专利权人：华东师范大学。

4.国家发明专利授权：刘成，郑勇辉，成岩，齐瑞娟，黄荣，一种具有纳米尺寸的钨塞小电极相变存储器件制备方法，申请日期：2020年08月24日，公开日期：2020年11月27日，授权日期：2022年10月25日，专利号：ZL202010855149.3，专利权人：华东师范大学。

5.国家发明专利授权：宋志棠，丁科元，成岩，相变存储器单元及其制备方法，申请日期：2017年4月1日，公开日期：2018年10月16日，授权日期：2020年6月30日，专利号：ZL201710215955.2，专利权人：中科院上海微系统所。

6.国家发明专利授权：齐瑞娟，成岩，黄荣，一种二维层状材料样品电学测试微电极的制备方法，申请日期：2019年4月15日，公开日期：2019年6月28日，授权日期：2020年2月18日，专利号：ZL 201910298039.9，专利权人：华东师范大学。

7.国家发明专利授权：齐瑞娟，彭晖，成岩，黄荣，一种微电极沉积掩膜的制备方法，申请日期：2019年4月15日，公开日期：2019年7月5日，授权日期：2020年1月7日，专利号：ZL 201910297991.7，专利权人：华东师范大学。

8.国家发明专利授权：雷炜斌，齐瑞娟，成岩，张媛媛，黄荣，一种硒纳米线光电检测器及制备方法，申请日期：2020年2月26日，公开日期：2020年7月7日，授权日期：2021年2月26日，专利号：ZL202010118719.0，专利权人：华东师范大学。

9.国家发明专利授权：宋志棠，郑勇辉，成岩，刘卫丽，宋三年，朱敏，用于相变存储器的Zr-Sb-Te系列相变材料及其制备方法，申请日期：2015年3月26日，公开日期：2015年8月12日，授权日期：2017年7月14日，专利号：ZL 201510136878.2，专利权人：中科院上海微系统所。

10.国家发明专利授权：刘旭焱，张挺，刘卫丽，宋志棠，杜小峰，顾怡峰，成岩，三维电阻转换存储芯片制备方法，申请日期：2010年12月8日，公开日期：2011年7月13日，授权日期：2013年6月19日，专利号：ZL201010579606.7，专利权人：中科院上海微系统所。

11.国家发明专利授权：张泽，王珂，成岩，韩晓东，在透射电镜样品上制备小间距电极的方法，申请日期：2008年9月5日，生效日期：2009年3月25日—2013年10月30日，授权日期：2011年5月11日，专利号：ZL200810119690.7，专利权人：北京工业大学。

12.国家发明专利授权：张泽，王珂，成岩，刘攀，韩晓东，一种相变存储器单元结构，申请日期：2008年9月5日，授权日期：2011年5月11日，失效日期：2013年11月6日，专利号：ZL200820122450.8，专利权人：北京工业大学。

13.国家发明专利授权：张泽，王珂，刘攀，成岩，韩晓东，相变材料信息存储方法，申请日期：2008年9月5日，公开日期：2009年1月28日，授权日期：2011年5月4日，专利号：ZL200810119688.X，专利权人：北京工业大学。

14.国家发明专利授权：韩晓东，成岩，王珂，张泽，宋志棠，刘波，张挺，封松林，用于相变存储器的Si－Te－Sb系列相变薄膜材料，申请日期：2008年4月11日，生效日期：2008年10月29日—2016年6月1日，授权日期：2010年2月17日，专利号：ZL200810103803.4，专利权人：北京工业大学。

国家发明专利申请：

15.国家发明专利申请：郑勇辉，成岩，郑赟喆，许亦琳，辛天骄，一种机器学习识别纳米器件中多晶薄膜的晶相分布的方法，申请日期：2022年11月29日，公开日期：2023年3月3日，申请号：202211508296.9，专利权人：华东师范大学。

16.国家发明专利申请：刘成，成岩，郑勇辉，肖威，齐瑞娟，黄荣，用于透射电镜原位电学测试的限制型存储单元制备方法，申请日期：2020年4月29日，公开日期：2020年8月14日，申请号：202010356010.4，专利权人：华东师范大学。

17.国家发明专利申请：余坤，成岩，刘成，唐琼颜，齐瑞娟，黄荣，张媛媛，一种相变材料纳米线及其制备方法，申请日期：2019年12月25日，公开日期：2020年5月19日，申请号：201911355126.X，专利权人：华东师范大学。

18.国家发明专利申请：钟超荣，齐瑞娟，成岩，黄荣，一种TEM样品的制备方法，申请日期：2020年6月10日，公开日期：2020年9月22日，申请号：202010522287.X，专利权人：华东师范大学。

19.国家发明专利申请：宋志棠，任堃，沈佳斌，郑勇辉，成岩，一种用于原位电学测试的透射电镜样品的制备方法，申请日期：2017年11月28日，申请号：201711213560.5，专利权人：中科院上海微系统所。

20.国家发明专利申请：宋三年，宋志棠，张中华，成岩，蔡道林，一种神经元器件及神经网络，申请日期：2013年10月31日，申请号：201310533049.9，专利权人：中科院上海微系统所。

21.国家发明专利申请：刘旭焱，张挺，刘卫丽，宋志棠，杜小峰，顾怡峰，成岩，三维立体结构电阻转换存储芯片的制备方法及芯片，申请日期：2010年12月3日，申请号：201010572456.7，专利权人：中科院上海微系统所。

22.国家发明专利申请：张挺，宋志棠，刘波，吴关平，成岩，封松林，制备复合材料的可组装靶材、其制造、修复和改装方法，申请日期：2010年7月27日，公开日期：2010年11月24日，申请号：201010237976.2，专利权人：中科院上海微系统所。

23.国家发明专利申请：韩晓东，成岩，戴亚南，张泽，一种用于信息存储的(GeTe)_a(Sb₂Te₃)_b基稀磁半导体材料，申请日期：2009年7月3日，公开日期：2010年1月20日，申请号：200910088519.9，专利权人：北京工业大学。

24.国家发明专利申请：张泽，王珂，成岩，刘攀，韩晓东，一种相变存储器单元的结构及其实现方法，申请日期：2008年9月5日，申请号：200810119691.1，专利权人：北京工业大学。

                 2020年度上海市科学技术奖自然科学奖一等奖